CY7C1411KV18-250BZXC vs CY7C1411KV18-250BZC vs CY7C1411KV18-300BZC

 
PartNumberCY7C1411KV18-250BZXCCY7C1411KV18-250BZCCY7C1411KV18-300BZC
DescriptionSRAM 36Mb, 1.8V, 250Mhz (4Mx8) QDR II SRAMSRAM 36Mb 1.8V 250Mhz 4M x 8 QDR II SRAMSRAM 36MB (4Mx8) 1.8v 300MHz QDR II SRAM
ManufacturerCypress SemiconductorCypress SemiconductorCypress Semiconductor
Product CategorySRAMSRAMSRAM
RoHSYNN
Memory Size36 Mbit36 Mbit36 Mbit
Organization4 M x 84 M x 84 M x 8
Access Time---
Maximum Clock Frequency250 MHz250 MHz300 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max1.9 V1.9 V1.9 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max460 mA460 mA520 mA
Minimum Operating Temperature0 C0 C0 C
Maximum Operating Temperature+ 70 C+ 70 C+ 70 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseFBGA-165FBGA-165FBGA-165
PackagingTrayTrayTray
Memory TypeVolatileVolatileVolatile
SeriesCY7C1411KV18CY7C1411KV18CY7C1411KV18
TypeSynchronousSynchronousSynchronous
BrandCypress SemiconductorCypress SemiconductorCypress Semiconductor
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity136136136
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Top