CY7C1414KV18-333BZXI vs CY7C1414KV18-333BZC vs CY7C1414KV18-333BZXC

 
PartNumberCY7C1414KV18-333BZXICY7C1414KV18-333BZCCY7C1414KV18-333BZXC
DescriptionSRAM 36Mb 1.8V 333Mhz 1M x 36 QDR II SRAMSRAM 36MB (1Mx36) 1.8v 333MHz QDR II SRAMSRAM 36MB (1Mx36) 1.8v 333MHz QDR II SRAM
ManufacturerCypress SemiconductorCypress SemiconductorCypress Semiconductor
Product CategorySRAMSRAMSRAM
RoHSYNY
Memory Size36 Mbit36 Mbit36 Mbit
Organization1 M x 361 M x 361 M x 36
Access Time--0.45 ns
Maximum Clock Frequency333 MHz333 MHz333 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max1.9 V1.9 V1.9 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max910 mA910 mA910 mA
Minimum Operating Temperature- 40 C0 C0 C
Maximum Operating Temperature+ 85 C+ 70 C+ 70 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseFBGA-165FBGA-165FBGA-165
PackagingTrayTrayTray
Memory TypeVolatileVolatileQDR
SeriesCY7C1414KV18CY7C1414KV18CY7C1414KV18
TypeSynchronousSynchronousSynchronous
BrandCypress SemiconductorCypress SemiconductorCypress Semiconductor
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity136136136
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
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