 |  | | |
| PartNumber | D2009UK | D2009 | D2009D |
| Description | RF MOSFET Transistors Silicon DMOS RF FET 10W-28V-1GHz PP | ||
| Manufacturer | TT Electronics | MSC | - |
| Product Category | RF MOSFET Transistors | Module | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Vds Drain Source Breakdown Voltage | 65 V | - | - |
| Gain | 10 dB | - | - |
| Output Power | 10 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DQ | - | - |
| Configuration | Dual | - | - |
| Operating Frequency | 1 GHz | - | - |
| Type | RF Power MOSFET | - | - |
| Brand | Semelab / TT Electronics | - | - |
| Pd Power Dissipation | 58 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V to 7 V | - | - |