D3S099N65B-U vs D3S099N65D-U vs D3S099N65E-T

 
PartNumberD3S099N65B-UD3S099N65D-UD3S099N65E-T
DescriptionMOSFET 99 mOhm 650V Superjunction Power MOSFET in TO-220MOSFET 99 mOhm 650V Superjunction Power MOSFET in TO-247MOSFET 99 mOhm 650V
ManufacturerD3 SemiconductorD3 SemiconductorD3 Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleSMD/SMT
Package / CaseTO-220-3TO-247-3TO-263-3
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage650 V-650 V
Id Continuous Drain Current35.5 A-31.8 A
Rds On Drain Source Resistance90 mOhms-99 mOhms
Vgs th Gate Source Threshold Voltage2.3 V-2.3 V
Vgs Gate Source Voltage30 V-30 V
Qg Gate Charge62.6 nC-77 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation281 W-154 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingTubeTubeReel
Transistor Type1 N-Channel-1 N-Channel
BrandD3D3D3
Fall Time63 ns-23 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time61 ns-24 ns
Factory Pack Quantity5030800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time81 ns-90 ns
Typical Turn On Delay Time41 ns-17 ns
Unit Weight0.063493 oz--
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