DCP55-16-13 vs DCP55-13 vs DCP55

 
PartNumberDCP55-16-13DCP55-13DCP55
DescriptionBipolar Transistors - BJT 1W 60VBipolar Transistors - BJT 1W 60V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V60 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.5 V0.5 V-
Maximum DC Collector Current1.5 A1.5 A-
Gain Bandwidth Product fT200 MHz200 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDCP55DCP55-
DC Current Gain hFE Max250250-
Height1.65 mm1.65 mm-
Length6.7 mm6.7 mm-
PackagingReelReelDigi-ReelR Alternate Packaging
Width3.7 mm3.7 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current1 A1 A-
DC Collector/Base Gain hfe Min2525-
Pd Power Dissipation3 W2 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity25002500-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003951 oz-
Package Case--TO-261-4, TO-261AA
Mounting Type--Surface Mount
Supplier Device Package--SOT-223
Power Max--1W
Transistor Type--NPN
Current Collector Ic Max--1A
Voltage Collector Emitter Breakdown Max--60V
DC Current Gain hFE Min Ic Vce--40 @ 150mA, 2V
Vce Saturation Max Ib Ic--500mV @ 50mA, 500mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--200MHz
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