DCP69-13 vs DCP69 vs DCP69-16

 
PartNumberDCP69-13DCP69DCP69-16
DescriptionBipolar Transistors - BJT 1W -20V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-223-4--
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max- 20 V--
Collector Base Voltage VCBO- 25 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 500 mV- 500 mV- 500 mV
Maximum DC Collector Current- 2 A- 2 A- 2 A
Gain Bandwidth Product fT200 MHz200 MHz200 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesDCP69DCP69DCP69
Height1.6 mm--
Length6.5 mm--
PackagingReelDigi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging
Width3.5 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min50 at - 5 mA, - 10 V--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.003951 oz0.000282 oz0.000282 oz
Package Case-TO-261-4, TO-261AATO-261-4, TO-261AA
Mounting Type-Surface MountSurface Mount
Supplier Device Package-SOT-223SOT-223
Power Max-1W1W
Transistor Type-PNPPNP
Current Collector Ic Max-1A1A
Voltage Collector Emitter Breakdown Max-20V20V
DC Current Gain hFE Min Ic Vce-85 @ 500mA, 1V100 @ 500mA, 1V
Vce Saturation Max Ib Ic-500mV @ 100mA, 1A500mV @ 100mA, 1A
Current Collector Cutoff Max-100nA (ICBO)100nA (ICBO)
Frequency Transition-200MHz200MHz
Pd Power Dissipation-1000 mW1000 mW
Collector Emitter Voltage VCEO Max-- 20 V- 20 V
Collector Base Voltage VCBO-- 25 V- 25 V
Emitter Base Voltage VEBO-- 5 V- 5 V
DC Collector Base Gain hfe Min-50 at - 5 mA - 10 V50 at - 5 mA - 10 V
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