DCX114TH-7 vs DCX114TK-7-F vs DCX114TH

 
PartNumberDCX114TH-7DCX114TK-7-FDCX114TH
DescriptionBipolar Transistors - Pre-Biased 150MW 10KBipolar Transistors - Pre-Biased 300MW 4.7KW
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased
RoHSYY-
ConfigurationDualDualDual
Transistor PolarityNPN, PNPNPN, PNPNPN PNP
Typical Input Resistor10 kOhms10 kOhms10 kOhms
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-563-6SC-74R-6-
DC Collector/Base Gain hfe Min100100-
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current100 mA100 mA-
Peak DC Collector Current100 mA100 mA100 mA
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesDCX114DCX114DCX114
PackagingReelReelTape & Reel (TR)
Height0.6 mm1.3 mm-
Length1.6 mm3.1 mm-
Width1.2 mm1.7 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Number of Channels2 Channel2 Channel-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000106 oz0.000529 oz0.000106 oz
Package Case--SOT-563, SOT-666
Mounting Type--Surface Mount
Supplier Device Package--SOT-563
Power Max--150mW
Transistor Type--1 NPN, 1 PNP - Pre-Biased (Dual)
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--50V
Resistor Base R1 Ohms--10k
Resistor Emitter Base R2 Ohms---
DC Current Gain hFE Min Ic Vce--100 @ 1mA, 5V
Vce Saturation Max Ib Ic--300mV @ 100μA, 1mA
Current Collector Cutoff Max--500nA (ICBO)
Frequency Transition--250MHz
Collector Emitter Voltage VCEO Max--50 V
DC Collector Base Gain hfe Min--100
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