DDTA114WCA-7-F vs DDTA114WCA-7 vs DDTA114WCA

 
PartNumberDDTA114WCA-7-FDDTA114WCA-7DDTA114WCA
DescriptionBipolar Transistors - Pre-Biased PRE-BIAS PNP 200mWBipolar Transistors - Pre-Biased PRE-BIAS PNP 200mW
ManufacturerDiodes IncorporatedDiodes IncorporatedDIODES
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-Biased
RoHSYN-
ConfigurationSingleSingleSingle
Transistor PolarityPNPPNPPNP
Typical Input Resistor10 kOhms10 kOhms10 kOhms
Typical Resistor Ratio2.132.132.13
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3-
DC Collector/Base Gain hfe Min2424-
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current- 0.1 A- 0.1 A- 0.1 A
Peak DC Collector Current100 mA100 mA100 mA
Pd Power Dissipation200 mW200 mW-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesDDTA114DDTA114WDDTA114
PackagingReel-Reel
DC Current Gain hFE Max2424-
Emitter Base Voltage VEBO- 0.3 V- 5 V-
Height1 mm1 mm-
Length3.05 mm3.05 mm-
TypePNP Pre-Biased Small Signal SOT-23 Surface Mount TransistorPre-Biased Transistor-
Width1.4 mm1.4 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz0.000282 oz0.000282 oz
Package Case--SOT-23-3
Pd Power Dissipation--0.2 W
Collector Emitter Voltage VCEO Max--50 V
Emitter Base Voltage VEBO--- 0.3 V
DC Collector Base Gain hfe Min--24
Top