DMC1017UPD-13 vs DMC1015UPD-13 vs DMC1016UPD-13

 
PartNumberDMC1017UPD-13DMC1015UPD-13DMC1016UPD-13
DescriptionMOSFET Enh FET 12Vdss 8Vgss 20V ComplementaryCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFETCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerDI5060-C-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current9.5 A, 6.9 A--
Rds On Drain Source Resistance17 mOhms, 32 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage8 V--
Qg Gate Charge18.6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.3 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging
SeriesDMC1017--
Transistor Type1 N-Channel, 1 P-Channel--
BrandDiodes Incorporated--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Unit Weight0.004092 oz--
Package Case-8-PowerTDFN8-PowerTDFN
Operating Temperature--55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting Type-Surface MountSurface Mount
Supplier Device Package-PowerDI5060-8PowerDI5060-8
FET Type-N and P-ChannelN and P-Channel
Power Max-2.3W2.3W
Drain to Source Voltage Vdss-12V12V, 20V
Input Capacitance Ciss Vds-1495pF @ 6V1454pF @ 6V
FET Feature-StandardStandard
Current Continuous Drain Id 25°C-9.5A, 6.9A9.5A, 8.7A
Rds On Max Id Vgs-17 mOhm @ 11.8A, 4.5V17 mOhm @ 11.8A, 4.5V
Vgs th Max Id-1.5V @ 250μA1.5V @ 250μA
Gate Charge Qg Vgs-15.6nC @ 4.5V32nC @ 8V
Top