 |  |  | |
| PartNumber | DMG1012T-13 | DMG1012T-7 | DMG1012T |
| Description | MOSFET 20V N-Ch Enhance Mode MOSFET | MOSFET MOSFET N-CHANNEL SOT-523 | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | DIODES |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | Y | Details |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-523-3 | SOT-523-3 | SOT-523-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 630 mA | 630 mA | 630 mA |
| Rds On Drain Source Resistance | 400 mOhms | 400 mOhms | 500 mOhms |
| Vgs th Gate Source Threshold Voltage | 500 mV | 500 mV | - |
| Vgs Gate Source Voltage | 6 V | 4.5 V | - |
| Qg Gate Charge | 736.6 nC | 736.6 pC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 0.28 W | 280 mW | 280 mW |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Reel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 14 S | - | - |
| Fall Time | 12.3 ns | 12.3 ns | 12.3 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 7.4 ns | 7.4 ns | - |
| Factory Pack Quantity | 10000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 26.7 ns | 26.7 ns | - |
| Typical Turn On Delay Time | 5.1 ns | 5.1 ns | 5.1 ns |
| Unit Weight | 0.000071 oz | 0.000071 oz | 0.000071 oz |
| Product | - | MOSFET Small Signal | - |
| Series | - | DMG1012 | DMG1012 |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |