DMG1012T-7 vs DMG1012T-7 , MAX8530TTK2 vs DMG1012T-7 TR

 
PartNumberDMG1012T-7DMG1012T-7 , MAX8530TTK2DMG1012T-7 TR
DescriptionMOSFET MOSFET N-CHANNEL SOT-523
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-523-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current630 mA--
Rds On Drain Source Resistance400 mOhms--
Vgs th Gate Source Threshold Voltage500 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge736.6 pC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation280 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
ProductMOSFET Small Signal--
SeriesDMG1012--
Transistor Type1 N-Channel--
BrandDiodes Incorporated--
Fall Time12.3 ns--
Product TypeMOSFET--
Rise Time7.4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26.7 ns--
Typical Turn On Delay Time5.1 ns--
Unit Weight0.000071 oz--
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