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| PartNumber | DMG1024UV-7 | DMG1024UV | DMG1024UV-7-CUT TAPE |
| Description | MOSFET MOSFET N-CHANNEL | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-563-6 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.38 A | - | - |
| Rds On Drain Source Resistance | 450 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 736.6 pC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 530 mW | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMG1024 | DMG1024 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 12.3 ns | 12.3 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.4 ns | 7.4 nS | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26.7 ns | 26.7 ns | - |
| Typical Turn On Delay Time | 5.1 ns | 5.1 ns | - |
| Unit Weight | 0.000106 oz | 0.000106 oz | - |
| Package Case | - | SOT-563, SOT-666 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-563 | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 530mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 60.67pF @ 16V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 1.38A | - |
| Rds On Max Id Vgs | - | 450 mOhm @ 600mA, 4.5V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 0.74nC @ 4.5V | - |
| Pd Power Dissipation | - | 530 mW | - |
| Vgs Gate Source Voltage | - | 6 V | - |
| Id Continuous Drain Current | - | 1.38 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 300 mOhms | - |
| Qg Gate Charge | - | 736.6 pC | - |
| Forward Transconductance Min | - | 1.4 S | - |