DMG204020R vs DMG204010R vs DMG204A00R

 
PartNumberDMG204020RDMG204010RDMG204A00R
DescriptionBipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mmBipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mmBipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
ManufacturerPanasonicPanasonicPanasonic Electronic Components
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Arrays
RoHSYY-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-6SOT-23-6-
Transistor PolarityNPN, PNPNPN, PNPNPN PNP
ConfigurationDualDualDual
Collector Emitter Voltage VCEO Max- 50 V- 50 V-
Gain Bandwidth Product fT160 MHz150 MHz250 MHz
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
PackagingReelReelDigi-ReelR Alternate Packaging
BrandPanasonicPanasonic-
Continuous Collector Current- 500 mA- 100 mA- 500 mA
DC Collector/Base Gain hfe Min120210-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Series---
Package Case--SOT-23-6
Mounting Type--Surface Mount
Supplier Device Package--Mini6-G4-B
Power Max--300mW
Transistor Type--NPN, PNP
Current Collector Ic Max--500mA
Voltage Collector Emitter Breakdown Max--20V, 10V
DC Current Gain hFE Min Ic Vce--200 @ 500mA, 2V / 130 @ 500mA, 2V
Vce Saturation Max Ib Ic--400mV @ 20mA, 500mA / 300mV @ 8mA, 400mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--150MHZ, 250MHz
Collector Emitter Voltage VCEO Max--- 10 V
DC Collector Base Gain hfe Min--130
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