DMG3418L-7 vs DMG3418L-13 vs DMG3418XXX-7-F

 
PartNumberDMG3418L-7DMG3418L-13DMG3418XXX-7-F
DescriptionMOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4WMOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current4 A4 A-
Rds On Drain Source Resistance60 mOhms50 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.5 V-
Vgs Gate Source Voltage10 V12 V-
Qg Gate Charge5.5 nC5.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.4 W1.4 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesDMG3418DMG3418-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time2 ns2 ns-
Product TypeMOSFETMOSFET-
Rise Time1.6 ns1.6 ns-
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time10.3 ns10.3 ns-
Typical Turn On Delay Time1.9 ns1.9 ns-
Unit Weight0.000282 oz0.000282 oz-
Tradename-PowerDI-
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