DMG4413LSS-13 vs DMG4413LSS-13-F vs DMG4413LSS-13-CUT TAPE

 
PartNumberDMG4413LSS-13DMG4413LSS-13-FDMG4413LSS-13-CUT TAPE
DescriptionMOSFET MOSFET,P-CHANNEL
ManufacturerDiodes Incorporated-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOIC-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance7.5 mOhms--
Vgs th Gate Source Threshold Voltage1.1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge46 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
ProductMOSFET Small Signal--
SeriesDMG4413L--
Transistor Type1 P-Channel--
BrandDiodes Incorporated--
Forward Transconductance Min26 S--
Fall Time66 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time160 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.030018 oz--
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