 | |  | |
| PartNumber | DMG4468LFG-7 | DMG4468LFG | DMG4468LK3 |
| Description | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | MOSFET MOSFET N-CHANNEL 30V/4.83 - 7.62A | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | DIODES |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DFN3030-8 | DFN3030-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 7.62 A | 7.62 A | - |
| Rds On Drain Source Resistance | 10 mOhms | 10 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 18.85 nC | 18.85 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 990 mW | 990 mW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | Reel | Reel |
| Product | MOSFET Small Signal | MOSFET Small Signal | - |
| Series | DMG4468 | DMG4468L | DMG4468 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 6.01 ns | 6.01 ns | 6.01 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 14.53 ns | 14.53 ns | 14.53 ns |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18.84 ns | 18.84 ns | 18.84 ns |
| Typical Turn On Delay Time | 5.46 ns | 5.46 ns | 5.46 ns |
| Forward Transconductance Min | - | 8 S | - |
| Unit Weight | - | - | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 1.68 W |
| Id Continuous Drain Current | - | - | 9.7 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 11 mOhms |
| Qg Gate Charge | - | - | 18.85 nC |
| Forward Transconductance Min | - | - | 8 S |