DMG4496SSS-13 vs DMG4496SSS vs DMG4496SSS-13-F

 
PartNumberDMG4496SSS-13DMG4496SSSDMG4496SSS-13-F
DescriptionMOSFET MOSFET N-CHANNEL
ManufacturerDiodes IncorporatedDIODES-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance16 mOhms--
Vgs Gate Source Voltage25 V--
Qg Gate Charge4.7 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.42 W--
ConfigurationSingleSingle-
PackagingReelReel-
ProductMOSFET Small Signal--
SeriesDMG4496DMG4496-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes Incorporated--
Forward Transconductance Min11.7 S--
Fall Time4.9 ns4.9 ns-
Product TypeMOSFET--
Rise Time3.64 ns3.64 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time4.9 ns4.9 ns-
Typical Turn On Delay Time4.76 ns4.76 ns-
Unit Weight0.002610 oz0.002610 oz-
Package Case-SOIC-8-
Pd Power Dissipation-1.42 W-
Vgs Gate Source Voltage-25 V-
Id Continuous Drain Current-10 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-16 mOhms-
Qg Gate Charge-4.7 nC-
Forward Transconductance Min-11.7 S-
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