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| PartNumber | DMG6601LVT-7 | DMG6601LVT-7-01 | DMG6601LVT-7-CUT TAPE |
| Description | MOSFET 30V Comp ENH Mode 25 to 30V MosFET | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSOT-26-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 3.8 A, 2.5 A | - | - |
| Rds On Drain Source Resistance | 55 mOhms, 110 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV, 400 mV | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 12.3 nC, 13.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMG6601 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 15.6 ns, 2.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.4 ns, 4.6 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 31.2 ns, 18.3 ns | - | - |
| Typical Turn On Delay Time | 1.6 ns, 1.7 ns | - | - |
| Unit Weight | 0.000459 oz | - | - |