DMG7430LFG-7 vs DMG7430LFG vs DMG7430LFG-13

 
PartNumberDMG7430LFG-7DMG7430LFGDMG7430LFG-13
DescriptionMOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K
ManufacturerDiodes IncorporatedDIODES-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerDI3333-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current10.5 A--
Rds On Drain Source Resistance11 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge26.7 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.2 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelDigi-ReelR Alternate Packaging-
SeriesDMG7430DMG7430-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes Incorporated--
Fall Time5.1 ns--
Product TypeMOSFET--
Rise Time21.2 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22.3 ns--
Typical Turn On Delay Time5.2 ns--
Unit Weight0.002540 oz0.002540 oz-
Package Case-8-PowerWDFN-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-PowerDI3333-8-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-900mW-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-1281pF @ 15V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-10.5A (Ta)-
Rds On Max Id Vgs-11 mOhm @ 20A, 10V-
Vgs th Max Id-2.5V @ 250μA-
Gate Charge Qg Vgs-26.7nC @ 10V-
Pd Power Dissipation-0.9 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-10.5 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-2.5 V-
Rds On Drain Source Resistance-15 mOhms-
Qg Gate Charge-12.5 nC-
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