DMMT3904W-7 vs DMMT3904W vs DMMT3904W-13-01-F

 
PartNumberDMMT3904W-7DMMT3904WDMMT3904W-13-01-F
DescriptionBipolar Transistors - BJT 40V 225mW MATCHEDTRANSISTOR, NPN MAT, 40V, 0.2A, SOT363, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:40V, Power Dissipation Pd:200mW, DC Collector Current:200mA, DC Current Gain hFE:100hFE, No. oGENERAL PURPOSE TRANSISTOR SOT
ManufacturerDiodes IncorporatedDiodes-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Arrays-
RoHSN--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
Transistor PolarityNPN--
ConfigurationDual--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Maximum DC Collector Current0.2 A--
Gain Bandwidth Product fT300 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesDMMT3904W--
DC Current Gain hFE Max300--
Height1 mm--
Length2.2 mm--
Width1.35 mm--
BrandDiodes Incorporated--
Continuous Collector Current0.2 A--
Pd Power Dissipation200 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000212 oz--
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