DMN1019UFDE-7 vs DMN1019USN vs DMN1019UFDE-7-CUT TAPE

 
PartNumberDMN1019UFDE-7DMN1019USNDMN1019UFDE-7-CUT TAPE
DescriptionMOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseU-DFN2020-E-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance10 mOhms--
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge27.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation690 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesDMN10--
Transistor Type1 N-Channel--
BrandDiodes Incorporated--
Forward Transconductance Min28 S--
Fall Time16.8 ns--
Product TypeMOSFET--
Rise Time22.2 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time57.6 ns--
Typical Turn On Delay Time7.6 ns--
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