PartNumber | DMN10H170SVT-7 | DMN10H170SVT-13 | DMN10H170SVT |
Description | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TSOT-26-6 | TSOT-26-6 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 2.6 A | - | - |
Rds On Drain Source Resistance | 115 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 9.7 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.2 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Reel | - |
Height | 1 mm | - | - |
Length | 2.9 mm | - | - |
Series | DMN10 | DMN10 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 1.6 mm | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Fall Time | 12 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 11 ns | - | - |
Factory Pack Quantity | 3000 | 10000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 42 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Unit Weight | - | 0.000459 oz | - |