DMN13H750S-7 vs DMN13M9UCA6-7 vs DMN13H750S-13

 
PartNumberDMN13H750S-7DMN13M9UCA6-7DMN13H750S-13
DescriptionMOSFET N-Ch Enh Mode FET 130Vdss 20VgssMOSFET MOSFET BVDSS: 8V-24VMOSFET N-Ch Enh Mode FET 130Vdss 20Vgss
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3-SOT-23-3
Number of Channels1 Channel2 Channel1 Channel
Transistor PolarityN-ChannelN-Channel, NPNN-Channel
Vds Drain Source Breakdown Voltage130 V12 V-
Id Continuous Drain Current1 A--
Rds On Drain Source Resistance750 mOhms--
Vgs th Gate Source Threshold Voltage2 V500 mV-
Vgs Gate Source Voltage10 V4.5 V-
Qg Gate Charge5.6 nC56.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.26 W2.67 W-
ConfigurationSingleDualSingle
Channel ModeEnhancementEnhancement-
PackagingReel-Reel
SeriesDMN13-DMN13
Transistor Type1 N-Channel2 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time1.7 ns6208 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time1.7 ns1694 ns-
Factory Pack Quantity3000300010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time6.6 ns4749 ns-
Typical Turn On Delay Time2.3 ns603 ns-
Unit Weight0.000282 oz-0.000282 oz
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