DMN15H310SE-13 vs DMN15H310SK3-13 vs DMN15H310SE

 
PartNumberDMN15H310SE-13DMN15H310SK3-13DMN15H310SE
DescriptionMOSFET 150V N-Ch Enh Fet 310mOhm 10Vgs 2.0AMOSFET 150V N-Ch Enh FET 310mOhm 10V 8.3A
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-223-3TO-252-3-
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current2 A--
Rds On Drain Source Resistance178 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge8.7 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation1.9 W--
ConfigurationSingle-Single Dual Drain
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
SeriesDMN15DMN15H310DMN15
Transistor Type1 N-Channel-1 N-Channel
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time11 ns-11 ns
Product TypeMOSFETMOSFET-
Rise Time7.8 ns-7.8 ns
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time11 ns-11 ns
Typical Turn On Delay Time3.5 ns-3.5 ns
Unit Weight0.003951 oz0.011993 oz0.000282 oz
Package Case--SOT-223-3
Pd Power Dissipation--1.9 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--2 A
Vds Drain Source Breakdown Voltage--150 V
Vgs th Gate Source Threshold Voltage--1 V
Rds On Drain Source Resistance--178 mOhms
Qg Gate Charge--8.7 nC
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