DMN2004DMK-7 vs DMN2004DMK vs DMN2004DMK-7-F

 
PartNumberDMN2004DMK-7DMN2004DMKDMN2004DMK-7-F
DescriptionMOSFET Dual N-Channel
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-26-6--
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current540 mA--
Rds On Drain Source Resistance550 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation225 mW--
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelDigi-ReelR Alternate Packaging-
Height1.1 mm--
Length3 mm--
ProductMOSFET Small Signal--
SeriesDMN2004DMN2004-
Transistor Type2 N-Channel2 N-Channel-
Width1.6 mm--
BrandDiodes Incorporated--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000529 oz--
Package Case-SOT-23-6-
Operating Temperature--65°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-26-
FET Type-2 N-Channel (Dual)-
Power Max-225mW-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-150pF @ 16V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-540mA-
Rds On Max Id Vgs-550 mOhm @ 540mA, 4.5V-
Vgs th Max Id-1V @ 250μA-
Gate Charge Qg Vgs---
Pd Power Dissipation-225 mW-
Vgs Gate Source Voltage-8 V-
Id Continuous Drain Current-540 mA-
Vds Drain Source Breakdown Voltage-20 V-
Rds On Drain Source Resistance-550 mOhms-
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