DMN5L06WK-7 vs DMN5L06W-7 vs DMN5L06WK

 
PartNumberDMN5L06WK-7DMN5L06W-7DMN5L06WK
DescriptionMOSFET N-ChannelMOSFET N-Channel
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3SOT-323-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage50 V50 V-
Id Continuous Drain Current300 mA280 mA-
Rds On Drain Source Resistance2 Ohms3 Ohms-
Vgs th Gate Source Threshold Voltage490 mV--
Vgs Gate Source Voltage5 V20 V-
Minimum Operating Temperature- 65 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation250 mW200 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1 mm1 mm-
Length2.15 mm2.2 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesDMN5L06DMN5L06-
Transistor Type1 N-Channel1 N-Channel-
Width1.3 mm1.35 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min200 mS--
Fall Time8.4 ns--
Product TypeMOSFETMOSFET-
Rise Time1.8 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time14.4 ns--
Typical Turn On Delay Time2.1 ns--
Unit Weight0.000212 oz0.000176 oz-
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