PartNumber | DMN5L06WK-7 | DMN5L06W-7 | DMN5L06WK |
Description | MOSFET N-Channel | MOSFET N-Channel | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-323-3 | SOT-323-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 50 V | 50 V | - |
Id Continuous Drain Current | 300 mA | 280 mA | - |
Rds On Drain Source Resistance | 2 Ohms | 3 Ohms | - |
Vgs th Gate Source Threshold Voltage | 490 mV | - | - |
Vgs Gate Source Voltage | 5 V | 20 V | - |
Minimum Operating Temperature | - 65 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 250 mW | 200 mW | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 1 mm | 1 mm | - |
Length | 2.15 mm | 2.2 mm | - |
Product | MOSFET Small Signal | MOSFET Small Signal | - |
Series | DMN5L06 | DMN5L06 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 1.3 mm | 1.35 mm | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Forward Transconductance Min | 200 mS | - | - |
Fall Time | 8.4 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 1.8 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 14.4 ns | - | - |
Typical Turn On Delay Time | 2.1 ns | - | - |
Unit Weight | 0.000212 oz | 0.000176 oz | - |