PartNumber | DMN6040SVT-7 | DMN6040SVTQ-13 | DMN6040SVTQ-7 |
Description | MOSFET 60V N-Ch 44mOhm 10V VGS 5.0A | MOSFET 60V Dual N-Ch FET 44mOhm 10V 5.0A | 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TSOT-26-6 | TSOT-26-6 | - |
Number of Channels | 1 Channel | 1 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 5 A | - | - |
Rds On Drain Source Resistance | 44 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 22.4 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.8 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Reel | Reel |
Series | DMN60 | DMN6040 | DMN6040 |
Transistor Type | 1 N-Channel | 2 N-Channel | 2 N-Channel |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Fall Time | 4 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 8.1 ns | - | - |
Factory Pack Quantity | 3000 | 10000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 20.1 ns | - | - |
Typical Turn On Delay Time | 6.6 ns | - | - |
Unit Weight | 0.000459 oz | 0.000459 oz | - |
Qualification | - | AEC-Q101 | - |