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| PartNumber | DMN62D0LFB-7 | DMN62D0LFB-7/DIODES | DMN62D0LFB-7B |
| Description | MOSFET MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R 3K | MOSFET N-CH 60V 100MA 3-DFN | |
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | X1-DFN1006-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 320 mA | - | - |
| Rds On Drain Source Resistance | 2 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 4 V | - | - |
| Qg Gate Charge | 0.45 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 0.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMN62 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 16.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3.4 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26.4 ns | - | - |
| Typical Turn On Delay Time | 3.4 ns | - | - |