DMN62D0U-7 vs DMN62D0U-13 vs DMN62D0UDW-13

 
PartNumberDMN62D0U-7DMN62D0U-13DMN62D0UDW-13
DescriptionMOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2AMOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2AMOSFET BVDSS: 41V60V SOT363 T&R 10K
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current380 mA380 mA-
Rds On Drain Source Resistance2 Ohms1.2 Ohms-
Vgs th Gate Source Threshold Voltage500 mV500 mV-
Vgs Gate Source Voltage4.5 V20 V-
Qg Gate Charge0.5 nC500 pC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation590 mW380 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReelTape & Reel (TR) Alternate Packaging
SeriesDMN62D0UDMN62D0UDMN62D0U
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min1.8 S1.8 mS-
Fall Time12.5 ns12.5 ns-
Product TypeMOSFETMOSFET-
Rise Time2.5 ns2.5 ns-
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time22.6 ns22.6 ns-
Typical Turn On Delay Time2.4 ns2.4 ns-
Unit Weight0.000282 oz0.000282 oz-
Package Case--6-TSSOP, SC-88, SOT-363
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--SOT-363
FET Type--2 N-Channel (Dual)
Power Max--320mW
Drain to Source Voltage Vdss--60V
Input Capacitance Ciss Vds--32pF @ 30V
FET Feature--Standard
Current Continuous Drain Id 25°C--350mA
Rds On Max Id Vgs--2 Ohm @ 100mA, 4.5V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs--0.5nC @ 4.5V
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