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| PartNumber | DMNH6011LK3Q-13 | DMNH6011LK3-13 | DMNH6012LK3-13 |
| Description | MOSFET MOSFET BVDSS: 41V~60V TO252 T&R 2.5K | MOSFET MOSFET BVDSS: 41V~60V TO252 T&R 2.5K | MOSFET MOSFET BVDSS: 41V-60V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | 60 V |
| Id Continuous Drain Current | 80 A | 80 A | 60 A |
| Rds On Drain Source Resistance | 12 mOhms | 12 mOhms | 8 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 12 V | 12 V | 20 V |
| Qg Gate Charge | 49.1 nC | 49.1 nC | 35.2 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 3 W | 3 W | 3.8 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | Reel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 10.2 ns | 10.2 ns | 5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8.7 ns | 8.7 ns | 11.9 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 28.2 ns | 28.2 ns | 16.5 ns |
| Typical Turn On Delay Time | 5.9 ns | 5.9 ns | 6.4 ns |
| Unit Weight | 0.011640 oz | 0.011640 oz | 0.011993 oz |
| Transistor Type | - | - | 1 N-Channel |