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| PartNumber | DMNH6021SPDQ-13 | DMNH6021SPD-13 | DMNH6021SPDW-13 |
| Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS 41V-60V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerDI5060-C-8 | PowerDI5060-C-8 | PowerDI5060-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 8.2 A | 8.2 A | 32 A |
| Rds On Drain Source Resistance | 15 mOhms | 15 mOhms | 25 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 20.1 nC, 20.1 nC | 20.1 nC, 20.1 nC | 20.1 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 2.8 W | 2.8 W | 2.8 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 5.4 ns, 5.4 ns | 5.4 ns, 5.4 ns | 5.4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6 ns, 6 ns | 6 ns, 6 ns | 6 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14.2 ns, 14.2 ns | 14.2 ns, 14.2 ns | 14.2 ns |
| Typical Turn On Delay Time | 4.4 ns, 4.4 ns | 4.4 ns, 4.4 ns | 4.4 ns |
| Unit Weight | 0.004092 oz | 0.004092 oz | - |