DMP21D0UFB4-7B vs DMP21D0UFB4-7B MOSFET P- vs DMP21D0UFB4-7B-CUT TAPE

 
PartNumberDMP21D0UFB4-7BDMP21D0UFB4-7B MOSFET P-DMP21D0UFB4-7B-CUT TAPE
DescriptionMOSFET 20V P-Ch ENH Mode 495mOhm -4.5V -0.77A
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseX2-DFN1006-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current770 mA--
Rds On Drain Source Resistance495 mOhms--
Vgs th Gate Source Threshold Voltage700 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge1.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation990 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesDMP21--
Transistor Type1 P-Channel--
BrandDiodes Incorporated--
Forward Transconductance Min50 mS--
Fall Time18.5 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity10000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time31.7 ns--
Typical Turn On Delay Time7.1 ns--
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