DMP3036SSD-13 vs DMP3036SS vs DMP3036SSD-13-F

 
PartNumberDMP3036SSD-13DMP3036SSDMP3036SSD-13-F
DescriptionMOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss
ManufacturerDiodes IncorporatedDIODES-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8--
Number of Channels2 Channel2 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance20 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge16.5 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.7 W--
ConfigurationDualDual Common Quad Drain-
Channel ModeEnhancementEnhancement-
TradenamePowerDIPowerDI-
PackagingReelDigi-ReelR Alternate Packaging-
SeriesDMP3036DMP3036-
Transistor Type2 P-Channel2 P-Channel-
BrandDiodes Incorporated--
Fall Time31.6 ns31.6 ns-
Product TypeMOSFET--
Rise Time14 ns14 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time65 ns65 ns-
Typical Turn On Delay Time8.2 ns8.2 ns-
Unit Weight0.002610 oz0.002610 oz-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SO-
FET Type-2 P-Channel (Dual)-
Power Max-1.2W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-1931pF @ 15V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-10.6A-
Rds On Max Id Vgs-20 mOhm @ 9A, 10V-
Vgs th Max Id-3V @ 250μA-
Gate Charge Qg Vgs-16.5nC @ 10V-
Pd Power Dissipation-1.7 W-
Vgs Gate Source Voltage-25 V-
Id Continuous Drain Current-- 18 A-
Vds Drain Source Breakdown Voltage-- 30 V-
Vgs th Gate Source Threshold Voltage-- 1 V-
Rds On Drain Source Resistance-16 mOhms-
Qg Gate Charge-16.5 nC-
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