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| PartNumber | DMP45H150DHE-13 | DMP45H21DHE-13 | DMP45H4D9HJ3 |
| Description | MOSFET MOSFET BVDSS: 251V-500V | MOSFET MOSFET BVDSS: 251V-500V | MOSFET MOSFETBVDSS: 251V-500V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Package / Case | SOT-223-3 | SOT-223-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 450 V | 450 V | 450 V |
| Id Continuous Drain Current | 250 mA | 600 mA | 4.6 A |
| Rds On Drain Source Resistance | 40 Ohms | 21 Ohms | 3.1 Ohms |
| Vgs th Gate Source Threshold Voltage | 2 V | 3 V | 5 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 30 V |
| Qg Gate Charge | 1.8 nC | 4.2 nC | 13.7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 13.9 W | 12.5 W | 104 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 87 ns | 21 ns | 31 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 22 ns | 40 ns |
| Factory Pack Quantity | 2500 | 2500 | 75 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 18 ns | 32 ns |
| Typical Turn On Delay Time | 12 ns | 17 ns | 19 ns |
| RoHS | - | - | Y |
| Transistor Type | - | - | 1 P-Channel |
| Unit Weight | - | - | 0.011640 oz |