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| PartNumber | DZT5551-13 | DZT5551 | DZT5551Q-13 |
| Description | Bipolar Transistors - BJT 1000mW 160Vceo | TRANSISTOR, NPN, 160V, 0.6A, SOT223, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:160V, Transition Frequency ft:130MHz, Power Dissipation Pd:1W, DC Collector Current:600mA, DC Cur | 160V NPN VOLTAGE TRANSISTOR IN SOT223 |
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 160 V | - | - |
| Collector Base Voltage VCBO | 180 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 200 mV | - | - |
| Maximum DC Collector Current | 600 mA | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | DZT5551 | - | - |
| Height | 1.65 mm | - | - |
| Length | 6.7 mm | - | - |
| Packaging | Reel | - | - |
| Width | 3.7 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| DC Collector/Base Gain hfe Min | 30 at 50 mA, 5 V | - | - |
| Pd Power Dissipation | 1000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.003951 oz | - | - |