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| PartNumber | EMF8 | EMF8132A3MA-DV-F-D | EMF8132A3PB-DV-F-D |
| Description | LPDDR3 SPECIAL/CUSTOM PLASTIC GR | IC SDRAM LPDDR3 8G NANA FBGA DDP | |
| Manufacturer | Rohm Semiconductor | - | - |
| Product Category | Transistors (BJT) - Arrays, Pre-Biased | - | - |
| Series | EMF8 | - | - |
| Packaging | Tape & Reel (TR) | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | SOT-563, SOT-666 | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | EMT6 | - | - |
| Configuration | Dual | - | - |
| Power Max | 150mW | - | - |
| Transistor Type | 1 NPN Pre-Biased, 1 NPN | - | - |
| Current Collector Ic Max | 100mA, 500mA | - | - |
| Voltage Collector Emitter Breakdown Max | 50V, 12V | - | - |
| Resistor Base R1 Ohms | 47k | - | - |
| Resistor Emitter Base R2 Ohms | 47k | - | - |
| DC Current Gain hFE Min Ic Vce | 68 @ 5mA, 5V / 270 @ 10mA, 2V | - | - |
| Vce Saturation Max Ib Ic | 300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA | - | - |
| Current Collector Cutoff Max | 500nA | - | - |
| Frequency Transition | 250MHz, 320MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Collector Emitter Voltage VCEO Max | 12 V at TR1 | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector Base Gain hfe Min | 270 | - | - |
| Typical Input Resistor | 47 kOhms | - | - |
| Typical Resistor Ratio | 1 | - | - |
| Peak DC Collector Current | 500 mA at TR1 100 mA at TR2 | - | - |