EMG3T2R vs EMG3 vs EMG3 TR

 
PartNumberEMG3T2REMG3EMG3 TR
DescriptionBipolar Transistors - Pre-Biased DUAL DIGITAL NPN/NPN INPUT RESISTOR
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
ConfigurationDual Common EmitterDual Common Emitter-
Transistor PolarityNPNNPN-
Typical Input Resistor4.7 kOhms4.7 kOhms-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseEMT-5--
DC Collector/Base Gain hfe Min100--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA100 mA-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation150 mW--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesEMG3EMG3-
PackagingReelDigi-ReelR Alternate Packaging-
DC Current Gain hFE Max600--
Emitter Base Voltage VEBO5 V--
Height0.5 mm--
Length1.6 mm--
Width1.2 mm--
BrandROHM Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity8000--
SubcategoryTransistors--
Part # AliasesEMG3--
Package Case-SC-75, SOT-416-
Mounting Type-Surface Mount-
Supplier Device Package-EMT3-
Power Max-150mW-
Transistor Type-2 NPN - Pre-Biased (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-4.7k-
Resistor Emitter Base R2 Ohms---
DC Current Gain hFE Min Ic Vce-100 @ 1mA, 5V-
Vce Saturation Max Ib Ic-150mV @ 250μA, 5mA-
Current Collector Cutoff Max-500nA (ICBO)-
Frequency Transition-250MHz-
Pd Power Dissipation-150 mW-
Collector Emitter Voltage VCEO Max-50 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-100-
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