EMX2T2R vs EMX2 vs EMX2 FHAT2R

 
PartNumberEMX2T2REMX2EMX2 FHAT2R
DescriptionBipolar Transistors - BJT DUAL NPN 50V 150MA
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Arrays-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseEMT-6--
Transistor PolarityNPNNPN-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage0.4 V300 mV-
Maximum DC Collector Current0.15 A150 mA-
Gain Bandwidth Product fT180 MHz250 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesEMX2EMX26-
DC Current Gain hFE Max560820 at 1 mA at 5 V-
Height0.5 mm--
Length1.6 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.2 mm--
BrandROHM Semiconductor--
Continuous Collector Current150 mA--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity8000--
SubcategoryTransistors--
Part # AliasesEMX2--
Package Case-SOT-563, SOT-666-
Mounting Type-Surface Mount-
Supplier Device Package-EMT6-
Power Max-150mW-
Transistor Type-2 NPN (Dual)-
Current Collector Ic Max-150mA-
Voltage Collector Emitter Breakdown Max-50V-
DC Current Gain hFE Min Ic Vce-820 @ 50mA, 5V-
Vce Saturation Max Ib Ic-300mV @ 5mA, 50mA-
Current Collector Cutoff Max-300nA (ICBO)-
Frequency Transition-250MHz-
Pd Power Dissipation-150 mW-
Collector Emitter Voltage VCEO Max-50 V-
Collector Base Voltage VCBO-60 V-
Emitter Base Voltage VEBO-12 V-
DC Collector Base Gain hfe Min-820 at 1 mA at 5 V-
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