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| PartNumber | F3L150R07W2E3_B11 | F3L150R07W2E3B11BOMA1 | F3L150R07W2E3_B11 , 1KSM |
| Description | IGBT Modules IGBT MODULES 650V 150A | IGBT MODULE VCES 600V 150A | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | IGBT-Inverter | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.45 V | - | - |
| Continuous Collector Current at 25 C | 150 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 335 W | - | - |
| Package / Case | Module | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | SMD/SMT | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 15 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | F3L150R07W2E3B11BOMA1 SP000638568 | - | - |
| Unit Weight | 1.375685 oz | - | - |