FCB110N65F vs FCB10A06 vs FCB1100DB/009

 
PartNumberFCB110N65FFCB10A06FCB1100DB/009
DescriptionMOSFET SF2 650V 110MOHM F D2PAK
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current35 A--
Rds On Drain Source Resistance110 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V, 30 V--
Qg Gate Charge98 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation357 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameSuperFET II FRFET--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesFCB110N65F--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time5.7 ns--
Product TypeMOSFET--
Rise Time21 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time89 ns--
Typical Turn On Delay Time31 ns--
Unit Weight0.046296 oz--
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