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| PartNumber | FCP190N60-GF102 | FCP190N60 | FCP190N60,FCP190N60E |
| Description | MOSFET 20.2A 600V MOSFET | MOSFET 600V N-Channel MOSFET SuperFET II | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V | - |
| Id Continuous Drain Current | 20.2 A | 20.2 A | - |
| Rds On Drain Source Resistance | 170 mOhms | 199 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V, 30 V | 20 V | - |
| Qg Gate Charge | 57 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 208 W | 208 W | - |
| Configuration | Single | Single | - |
| Tradename | SuperFET II | SuperFET II | - |
| Packaging | Tube | Tube | - |
| Height | 16.3 mm | 16.3 mm | - |
| Length | 10.67 mm | 10.67 mm | - |
| Series | FCP190N60_GF102 | FCP190N60 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.7 mm | 4.7 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Forward Transconductance Min | 21 S | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 64 ns | - | - |
| Typical Turn On Delay Time | 20 ns | - | - |
| Part # Aliases | FCP190N60_GF102 | - | - |
| Unit Weight | 0.063493 oz | 0.063493 oz | - |