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| PartNumber | FD800R33KF2C-K | FD800R33KF2C | FD800R33KF2CKNOSA1 |
| Description | IGBT Modules N-CH 3.3KV 1.3KA | IGBT Modules 3300V 800A CHOPPER | IGBT MODULE VCES 1700V 800A |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| Packaging | Tray | Tray | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 2 | 1 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FZ800R45KL3B5NOSA2 SP001035696 | FD800R33KF2CNOSA1 SP000100606 | - |
| RoHS | - | N | - |
| Product | - | IGBT Silicon Modules | - |
| Configuration | - | Dual | - |
| Collector Emitter Voltage VCEO Max | - | 3300 V | - |
| Collector Emitter Saturation Voltage | - | 3.4 V | - |
| Continuous Collector Current at 25 C | - | 1300 A | - |
| Gate Emitter Leakage Current | - | 400 nA | - |
| Pd Power Dissipation | - | 9.6 kW | - |
| Package / Case | - | IHM190 | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Maximum Operating Temperature | - | + 125 C | - |
| Height | - | 38 mm | - |
| Length | - | 190 mm | - |
| Width | - | 130 mm | - |
| Mounting Style | - | SMD/SMT | - |
| Maximum Gate Emitter Voltage | - | 20 V | - |