FDA18N50 vs FDA18N50,18N50 vs FDA18N50C

 
PartNumberFDA18N50FDA18N50,18N50FDA18N50C
DescriptionMOSFET 500V N-CH MOSFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current19 A--
Rds On Drain Source Resistance265 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation239 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.1 mm--
Length16.2 mm--
SeriesFDA18N50--
Transistor Type1 N-Channel--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min25 S--
Fall Time90 ns--
Product TypeMOSFET--
Rise Time165 ns--
Factory Pack Quantity450--
SubcategoryMOSFETs--
Typical Turn Off Delay Time95 ns--
Typical Turn On Delay Time55 ns--
Unit Weight0.225789 oz--
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