FDC642P vs FDC642P / 642 vs FDC642P , 1N5221B

 
PartNumberFDC642PFDC642P / 642FDC642P , 1N5221B
DescriptionMOSFET SSOT-6 P-CH -20V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance65 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.6 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDC642P--
Transistor Type1 P-Channel--
TypeMOSFET--
Width1.6 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min9 S--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time7 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time120 ns--
Typical Turn On Delay Time6 ns--
Part # AliasesFDC642P_NL--
Unit Weight0.001058 oz--
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