FDD6680A vs FDD6680A FDD6680 vs FDD6680A NL

 
PartNumberFDD6680AFDD6680A FDD6680FDD6680A NL
DescriptionMOSFET 30V N-Ch PowerTrench
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current56 A--
Rds On Drain Source Resistance7 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation2.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min56 S--
Fall Time13 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time31 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesFDD6680A_NL--
Unit Weight0.139332 oz--
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