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| PartNumber | FDD6N50TM-F085 | FDD6N50TM | FDD6N50TM-WS |
| Description | MOSFET Trans MOS N-Ch 500V 6A 3-Pin 2+Tab | MOSFET 500V 6A 760mOhms | MOSFET 500V 6A N-Channel |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | 500 V |
| Id Continuous Drain Current | 6 A | 6 A | 6 A |
| Rds On Drain Source Resistance | 760 mOhms | 760 mOhms | 760 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 89 W | 89 W | 89 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.39 mm | 2.39 mm | 2.39 mm |
| Length | 6.73 mm | 6.73 mm | 6.73 mm |
| Series | FDD6N50TM_F085 | FDD6N50 | FDD6N50 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | Enhancement Mode Field Effect Transistor | - | - |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 2.5 S | - | - |
| Fall Time | 35 ns | 35 ns | 35 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 55 ns | 55 ns | 55 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 25 ns | 25 ns |
| Typical Turn On Delay Time | 6 ns | 6 ns | 6 ns |
| Part # Aliases | FDD6N50TM_F085 | - | FDD6N50TM_WS |
| Unit Weight | 0.009184 oz | 0.009184 oz | 0.009184 oz |