PartNumber | FDD86367-F085 | FDD86326 | FDD86367 |
Description | MOSFET MV7 80/20V1000A N-CH PowerTrench MOSFET | MOSFET 80V N-Channel PowerTrench MOSFET | MOSFET MV7 80/20V 1000A N-chanPwrTrnchMOSFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 80 V | 80 V | 80 V |
Id Continuous Drain Current | 100 A | 37 A | 100 A |
Rds On Drain Source Resistance | 8.4 mOhms | 23 mOhms | 3.3 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 3.1 V | 2 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 68 nC | 7.6 nC | 88 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 175 C |
Pd Power Dissipation | 227 W | 62 W | 227 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Qualification | AEC-Q101 | - | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Height | 2.39 mm | 2.39 mm | - |
Length | 6.73 mm | 6.73 mm | - |
Series | FDD86367_F085 | FDD86326 | FDD86367 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Fall Time | 16 ns | - | 16 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 49 ns | - | 49 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 36 ns | - | 36 ns |
Typical Turn On Delay Time | 20 ns | - | 20 ns |
Part # Aliases | FDD86367_F085 | - | - |
Unit Weight | 0.009184 oz | 0.009184 oz | 0.009184 oz |
Tradename | - | PowerTrench | - |
Forward Transconductance Min | - | 21 S | - |