FDG311N vs FDG311 vs FDG311G

 
PartNumberFDG311NFDG311FDG311G
DescriptionMOSFET SC70-6 N-CH 20V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-323-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current1.9 A--
Rds On Drain Source Resistance115 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation750 mW--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.1 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesFDG311N--
Transistor Type1 N-Channel--
TypeMOSFET--
Width1.25 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min6 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time10 ns--
Typical Turn On Delay Time5 ns--
Part # AliasesFDG311N_NL--
Unit Weight0.000988 oz--
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