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| PartNumber | FDG6313N | FDG6313N /3.3 | FDG6313N , 1N5230B-TAP |
| Description | MOSFET 25V Dual N-Ch Digital | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 500 mA | - | - |
| Rds On Drain Source Resistance | 340 mOhms | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 2 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Type | FET | - | - |
| Width | 1.25 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 1.45 S | - | - |
| Fall Time | 8.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8.5 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 17 ns | - | - |
| Typical Turn On Delay Time | 3 ns | - | - |
| Part # Aliases | FDG6313N_NL | - | - |
| Unit Weight | 0.000194 oz | - | - |