FDG6335N vs FDG6335N , 1N5232BTB vs FDG6335N-CUT TAPE

 
PartNumberFDG6335NFDG6335N , 1N5232BTBFDG6335N-CUT TAPE
DescriptionMOSFET FDG6335N
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-323-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current700 mA--
Rds On Drain Source Resistance300 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 mW--
ConfigurationDual--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.1 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesFDG6335N--
Transistor Type2 N-Channel--
TypeMOSFET--
Width1.25 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min2.8 S--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time7 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9 ns--
Typical Turn On Delay Time5 ns--
Part # AliasesFDG6335N_NL--
Unit Weight0.000988 oz--
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